Hydrogenated Dilute Nitride Semiconductors

Hydrogenated Dilute Nitride Semiconductors PDF Book Detail:
Author: Gianluca Ciatto
Publisher: CRC Press
ISBN: 9814463469
Size: 19.53 MB
Format: PDF, Docs
Category : Science
Languages : en
Pages : 316
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Book Description: The nonlinear behavior of nitrogen and the passivation effect of hydrogen in dilute nitrides open the way to the manufacture of a new class of nanostructured devices with in-plane variation of the optical band gap. This book addresses the modifications of the electronic structure and of the optical and structural properties induced in these technologically important semiconductors by atomic hydrogen irradiation. The book comprises discussions on experimental results from several techniques, enriched by state-of-the-art theoretical studies aimed at clarifying the origin of hydrogenation effects that lead to the discovery of specific nitrogen–hydrogen complexes. It presents techniques, such as infrared absorption spectroscopy, synchrotron radiation, and nuclear reaction analysis, which have indeed been crucial for addressing the physical origin of hydrogenation effects and their role in fine structural characterization. The book is not a simple assembly of the contributions of different groups on the subject; it rather tells the complete story of the amazing effects of hydrogen irradiation from the first observations to the discovery of their origin and to potential technology transfer. The primary scope of the book is to guide PhD students and new scientists into the field and to inspire similar analysis approaches in other fields.

Dilute Nitride Semiconductors

Dilute Nitride Semiconductors PDF Book Detail:
Author: Mohamed Henini
Publisher: Elsevier
ISBN: 9780080455990
Size: 46.79 MB
Format: PDF, Docs
Category : Technology & Engineering
Languages : en
Pages : 640
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Book Description: This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field. It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas. Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community. The high speed lasers operating at wavelength of 1.3 μm and 1.55 μm are very important light sources in optical communications since the optical fiber used as a transport media of light has dispersion and attenuation minima, respectively, at these wavelengths. These long wavelengths are exclusively made of InP-based material InGaAsP/InP. However, there are several problems with this material system. Therefore, there has been considerable effort for many years to fabricate long wavelength laser structures on other substrates, especially GaAs. The manufacturing costs of GaAs-based components are lower and the processing techniques are well developed. In 1996 a novel quaternary material GaInAsN was proposed which could avoid several problems with the existing technology of long wavelength lasers. In this book, several leaders in the field of dilute nitrides will cover the growth and processing, experimental characterization, theoretical understanding, and device design and fabrication of this recently developed class of semiconductor alloys. They will review their current status of research and development. Dilute Nitrides (III-N-V) Semiconductors: Physics and Technology organises the most current available data, providing a ready source of information on a wide range of topics, making this book essential reading for all post graduate students, researchers and practitioners in the fields of Semiconductors and Optoelectronics Contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field Gives the reader easier access and better evaluation of future trends, conveying important results and current ideas Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community

Photonics And Electronics With Germanium

Photonics and Electronics with Germanium PDF Book Detail:
Author: Kazumi Wada
Publisher: John Wiley & Sons
ISBN: 3527650237
Size: 42.62 MB
Format: PDF, ePub, Mobi
Category : Science
Languages : en
Pages : 336
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Book Description: Representing a further step towards enabling the convergence of computing and communication, this handbook and reference treats germanium electronics and optics on an equal footing. Renowned experts paint the big picture, combining both introductory material and the latest results. The first part of the book introduces readers to the fundamental properties of germanium, such as band offsets, impurities, defects and surface structures, which determine the performance of germanium-based devices in conjunction with conventional silicon technology. The second part covers methods of preparing and processing germanium structures, including chemical and physical vapor deposition, condensation approaches and chemical etching. The third and largest part gives a broad overview of the applications of integrated germanium technology: waveguides, photodetectors, modulators, ring resonators, transistors and, prominently, light-emitting devices. An invaluable one-stop resource for both researchers and developers.

Dilute Iii V Nitride Semiconductors And Material Systems

Dilute III V Nitride Semiconductors and Material Systems PDF Book Detail:
Author: Ayse Erol
Publisher: Springer Science & Business Media
ISBN: 9783540745297
Size: 73.13 MB
Format: PDF
Category : Technology & Engineering
Languages : en
Pages : 592
View: 5771

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Book Description: This book reviews the current status of research and development in dilute III-V nitrides. It covers major developments in this new class of materials within 24 chapters from prominent research groups. The book integrates materials science and applications in optics and electronics in a unique way. It is valuable both as a reference work for researchers and as a study text for graduate students.

Physics And Applications Of Dilute Nitrides

Physics and Applications of Dilute Nitrides PDF Book Detail:
Author: I. Buyanova
Publisher: CRC Press
ISBN: 1482296497
Size: 27.69 MB
Format: PDF, Mobi
Category : Science
Languages : en
Pages : 442
View: 797

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Book Description: Since their development in the 1990s, it has been discovered that diluted nitrides have intriguing properties that are not only distinct from those of conventional semiconductor materials, but also are conducive to various applications in optoelectronics and photonics. The book examines these applications and presents a broad and in-depth look at t

State Of The Art Program On Compound Semiconductors 51 Sotapocs 51 And Wide Bandgap Semiconductor Materials And Devices 10

State of the Art Program on Compound Semiconductors 51  SOTAPOCS 51  and Wide Bandgap Semiconductor Materials and Devices 10 PDF Book Detail:
Author: E. Stokes
Publisher: The Electrochemical Society
ISBN: 1566777496
Size: 12.93 MB
Format: PDF
Category : Science
Languages : en
Pages : 130
View: 7705

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Book Description: The papers included in this issue of ECS Transactions were originally presented in the joint symposium ¿State-of-the-Art Program on Compound Semiconductors 51 (SOTAPOCS 51) and Wide-Bandgap Semiconductor Materials and Devices 10¿, held during the 216th meeting of The Electrochemical Society, in Vienna, Austria from October 4 to 9, 2009.

Characterization Of Semiconductor Heterostructures And Nanostructures

Characterization of Semiconductor Heterostructures and Nanostructures PDF Book Detail:
Author: Giovanni Agostini
Publisher: Newnes
ISBN: 044459549X
Size: 66.23 MB
Format: PDF, Mobi
Category : Technology & Engineering
Languages : en
Pages : 828
View: 5001

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Book Description: Characterization of Semiconductor Heterostructures and Nanostructures is structured so that each chapter is devoted to a specific characterization technique used in the understanding of the properties (structural, physical, chemical, electrical etc..) of semiconductor quantum wells and superlattices. An additional chapter is devoted to ab initio modeling. The book has two basic aims. The first is educational, providing the basic concepts of each of the selected techniques with an approach understandable by advanced students in Physics, Chemistry, Material Science, Engineering, Nanotechnology. The second aim is to provide a selected set of examples from the recent literature of the TOP results obtained with the specific technique in understanding the properties of semiconductor heterostructures and nanostructures. Each chapter has this double structure: the first part devoted to explain the basic concepts, and the second to the discussion of the most peculiar and innovative examples. The topic of quantum wells, wires and dots should be seen as a pretext of applying top level characterization techniques in understanding the structural, electronic etc properties of matter at the nanometer (and even sub-nanometer) scale. In this respect it is an essential reference in the much broader, and extremely hot, field of Nanotechnology. Comprehensive collection of the most powerful characterization techniques for semiconductors heterostructures and nanostructures Most of the chapters are authored by scientists that are world-wide among the top-ten in publication ranking of the specific field Each chapter starts with a didactic introduction on the technique The second part of each chapters deals with a selection of top examples highlighting the power of the specific technique to analyse the properties of semiconductors heterostructures and nanostructures

Microscopy Of Semiconducting Materials 2007

Microscopy of Semiconducting Materials 2007 PDF Book Detail:
Author: A.G. Cullis
Publisher: Springer Science & Business Media
ISBN: 9781402086151
Size: 49.11 MB
Format: PDF, ePub, Mobi
Category : Technology & Engineering
Languages : en
Pages : 498
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Book Description: This volume contains invited and contributed papers presented at the conference on ‘Microscopy of Semiconducting Materials’ held at the University of Cambridge on 2-5 April 2007. The event was organised under the auspices of the Electron Microscopy and Analysis Group of the Institute of Physics, the Royal Microscopical Society and the Materials Research Society. This international conference was the fifteenth in the series that focuses on the most recent world-wide advances in semiconductor studies carried out by all forms of microscopy and it attracted delegates from more than 20 countries. With the relentless evolution of advanced electronic devices into ever smaller nanoscale structures, the problem relating to the means by which device features can be visualised on this scale becomes more acute. This applies not only to the imaging of the general form of layers that may be present but also to the determination of composition and doping variations that are employed. In view of this scenario, the vital importance of transmission and scanning electron microscopy, together with X-ray and scanning probe approaches can immediately be seen. The conference featured developments in high resolution microscopy and nanoanalysis, including the exploitation of recently introduced aberration-corrected electron microscopes. All associated imaging and analytical techniques were demonstrated in studies including those of self-organised and quantum domain structures. Many analytical techniques based upon scanning probe microscopies were also much in evidence, together with more general applications of X-ray diffraction methods.

Characterization Of Semiconductor Heterostructures And Nanostructures

Characterization of Semiconductor Heterostructures and Nanostructures PDF Book Detail:
Author: Carlo Lamberti
Publisher: Elsevier Science Limited
ISBN:
Size: 46.59 MB
Format: PDF, Docs
Category : Technology & Engineering
Languages : en
Pages : 486
View: 2919

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Book Description: Characterization of Semiconductor Heterostructures and Nanostructures” is structured in chapters, each one devoted to a specific characterization technique used in the understanding of the properties (structural, physical, chemical, electrical etc..) of semiconductor quantum wells and superlattices. A chapter is devoted to the ab initio modeling. The book has basically a double aim. The first one lies on the educational ground. The book provides the basic concept of each of the selected techniques with an approach understandable by master and PhD students in Physics, Chemistry, Material Science, Engineering, Nanotechnology. The second aim is to provide a selected set of examples from the recent literature of the TOP results obtained with the specific technique in understanding the properties of semiconductor heterostructures and nanostructures. Each chapter has this double structure: a first part devoted to explain the basic concepts, providing the larger possible audience, and a second one to the discussion of the most peculiar and innovative examples, allowing the book to have the longer possible life time. Of course, the book is devoted to the specialized subset of scientists working in the fields of design, growth, characterization, testing of heterostructures-based devices in both academic and industrial laboratories. But the final goal is somewhat more ambitious, and in this regard the topic of quantum wells, wires and dots should be seen as a pretext of applying top level characterization techniques in understanding the structural, electronic etc… properties of matter at the nanometer (even sub-nanometer) scale. In this way it is aimed to become a reference book in the much broader, and extremely hot, field of Nanotechnology. - Comprehensive collection of the most powerful characterization techniques for semiconductors heterostructures and nanostructures. - Most of the chapters are authored by scientists that are world wide among the top-ten in publication ranking of the specific field. - Each chapter starts with a didactic introduction on the technique. - The second part of each chapters deals with a selection of top examples highlighting the power of the specific technique to analyse the properties of semiconductors heterostructures and nanostructures.